Siguang Ma
  • Current Position Graduate student
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  • Contact Information
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    Siguang Ma
    Department of Electrical Engineering
    University of California, Los Angeles
    (310) 206-0207
  • EDUCATION:
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    Fall, 2006-Now
    Device Research Laboratory, Department of Electrical Engineering, UCLA
    PhD study
    1997-1999 National University of Singapore
    M.Eng in Microelectronics
    1992-1997
    University of Science and Technology of China
    B.Sc. in Applied Physics
  • Work Experience:
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    2004-2006 Device Research Laboratory, Department of Electrical Engineering, UCLA
    Research Engineer
    SiGe-based nanodevice development and characterization
    2002-2004 Nanyang Technological University (Singapore)
    Research Engineer
    InGaAsN laser diode development and characterization
    1999-2002 Agilent Technologies Singapore Pte Ltd
    Process Engineer
    InP-based optoelectronic devices fabrication
  • Publications:
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    1. “Semiconductor Nanowires for Electronic and Optoelectronic Device Applications” Shu Yuan, Hwe Ming Lam, Siguang Ma Handbook fo Semiconductor Nanostructures and Nanodevices Chapter 8, vol. 4 p. 279, 2006
    2. “High-power ridge waveguide InGaAsN lasers fabricated with pulsed anodic oxidation” Qu Y, Liu CY, Ma SG, et al. IEEE Photonics Technology Letters 16 (11): 2406-2408 NOV 2004
    3. “Gate-Induced Drain Leakage Current Enhanced by Plasma Charging Damage” Siguang Ma, Yaohui Zhang, M. F. Li, et al. IEEE Transaction on Electron Devices. vol. 48, no. 5, p. 1006, 2001
    4. “Role of Hole Fluence in Gate Oxide Breakdown” M. F. Li, Y. D. He, S. G. Ma, B. J. Cho, K. F. Lo and M. Z. Xu, IEEE Electron Device Letter, vol. 20, no. 11, p. 586, 1999